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MessagePosté le: Jeu 18 Oct - 06:43 (2018)    Sujet du message: Authentic Eli Apple Jersey Répondre en citant

PAM-XIAMEN Offers GaN on Sapphire substrate Xiamen Powerway Advanced Material Co. Ryan Anderson Jersey ,Ltd., a leading supplier of GaN on Sapphire substrate and other related products and services announced the new availability of size 2” is on mass production in 2017. This new product represents a natural addition to PAM-XIAMEN's product line.

Dr. Shaka, said, "We are pleased to offer GaN on Sapphire substrate to our customers including many who are developing better and more reliable for Ohmic contact. An ohmic contact is a non-rectifying electrical junction: a junction between two conductors that has a linear current–voltage (I-V) curve as with Ohm's law. Low resistance ohmic contacts are used to allow charge to flow easily in both directions between the two conductors, without blocking due to rectification or excess power dissipation due to voltage thresholds.. The availability improve boule growth and wafering processes." and "Our customers can now benefit from the increased device yield expected when developing advanced transistors on a square substrate. Our GaN on Sapphire substrate are natural by products of our ongoing efforts Jonathan Allen Jersey , currently we are devoted to continuously develop more reliable products."

PAM-XIAMEN's improved GaN on Sapphire substrate product line has benefited from strong tech, support from Native University and Laboratory Center.

Now it shows an example as follows:

1) 2" GaN on Sapphire substrate

- 0.3um N++ GaN(Si doped) --- Concentration : > 2x10^18cm-3 (highly doped)
- 1um Undoped GaN buffer --- Concentration : -10^17cm-3
(Polarity: Ga-face)
- Substrate: 2" Sapphie, C-plane off 0.1deg toward A-plane, SSP, 0.43mm(t)

2) 2" GaN on Sapphire substrate

- 0.3um N++ GaN(Si doped) --- Concentration : > 2x10^18cm-3 (highly doped)
- Substrate: 2" Sapphie Derrius Guice Jersey , C-plane off 0.1deg toward A-plane, SSP, 0.43mm(t)

About Xiamen Powerway Advanced Material Co., Ltd

Found in 1990, Xiamen Powerway Advanced Material Co. Da'Ron Payne Jersey , Ltd (PAM-XIAMEN) is a leading manufacturer of compound semiconductor material in China. PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, manufacturing processes, engineered substrates and semiconductor devices. PAM-XIAMEN's technologies enable higher performance and lower cost manufacturing of semiconductor wafer.

About GaN on Sapphire substrate

Two alloyed ohmic contact structures for AlGaNGaN–TiAlTiAu and TiAlMoAu were studied. Both structures were optimized for minimum ohmic contact resistance. Structures grown on sapphire and SiC substrates were used to investigate structural properties of ohmic contacts to AlGaNGaN. Ohmic contacts to AlGaNGaN on SiC showed higher contact resistance values compared to contacts to AlGaNGaN on sapphire. Ohmic contact metals were etched on samples after annealing. The alloyed interface was studied with backside illumination under an optical microscope. Alloyed inclusions associated with threading dislocations were observed on the surface. For the AlGaNGaN on SiC sample the inclusion density was an order of magnitude lower than for the sample on sapphire. Conductive atomic force microscopy with carbon nanotube tip was used to investigate topography and conductivity profile of the surface after ohmic contact metal removal by etching.

Q&A

C: Could you please supply for following items
1) 2" GaN on Sapphire substrate ----- Quantity : Min. Q'ty

- 0.3um N++ GaN(Si doped) --- Concentration : > 2x10^18cm-3 (highly doped)
- 1um Undoped GaN buffer --- Concentration : -10^17cm-3
(Polarity: Ga-face)
- Substrate: 2" Sapphie, C-plane off 0.1deg toward A-plane, SSP Vernon Davis Jersey , 0.43mm(t)
2) 2" GaN on Sapphire substrate ----- Quantity : Min. Q'ty

- 0.3um N++ GaN(Si doped) --- Concentration : > 2x10^18cm-3 (highly doped)
- Substrate: 2" Sapphie, C-plane off 0.1deg toward A-plane, SSP, 0.43mm(t)
P: We are processing this order, however we notice that you require substrate orientation:C-plane off 0.1deg toward A-plane Ryan Kerrigan Jersey , SSP, 0.43mm(t).
Please well note, the orientation should be a tolerance, the correct one should be:
substrate orientation:C-plane off 0.2+-0.1deg toward A-plane, SSP Jordan Reed Jersey , 0.43mm(t).
C: They will use it for MOSCAP & ohmic contact, not LED application.
If it is suitable for MOSCAP & ohmic contact,
the c-plane off 0.2+-0.1deg toward A-plane is acceptable.
P: Please well note the substrate orientation does not affect your application.
What is more, we do not change your original orientation,
we just tell you the orientation should have tolerance

Key Words: GaN on Sapphire substrate Josh Norman Jersey , Ohmic contact, MOSCAP, LED application

For more information, please visit our website: http:www.semiconductorwafers.net, send us email at angel.ye@powerwaywafer or powerwaymaterial@gmail.



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